SEMICONDUCTOR DEVICE WITH ADHESION LAYER

SEMICONDUCTOR DEVICE WITH ADHESION LAYER

A gate structure includes a gate dielectric layer over a semiconductor workpiece. The gate structure further includes a work function layer over the gate dielectric layer, wherein the work function layer has a U-shape profile. The gate structure further includes an adhesion layer over the work funct...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LIN, Chun-Chih, CHEN, Yen-Yu, BIH, Shih Wei
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A gate structure includes a gate dielectric layer over a semiconductor workpiece. The gate structure further includes a work function layer over the gate dielectric layer, wherein the work function layer has a U-shape profile. The gate structure further includes an adhesion layer over the work function layer, wherein a surface of the adhesion layer farthest from the work function layer is substantially free of oxygen atoms. The gate structure further includes a conductive layer over the adhesion layer, wherein the conductive layer has an I-shape profile.