VOID-FREE HIGH ASPECT RATIO METAL ALLOY INTERCONNECTS AND METHOD OF MANUFACTURE USING A SOLVENT-BASED ETCHANT

VOID-FREE HIGH ASPECT RATIO METAL ALLOY INTERCONNECTS AND METHOD OF MANUFACTURE USING A SOLVENT-BASED ETCHANT

An integrated circuit structure comprises a dielectric layer on a substrate. An open structure is in the dielectric layer, and a void-free metal-alloy interconnect is formed in the open structure, wherein the void-free metal-alloy interconnect comprise a metal-alloy comprising a combination of two o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SURAWANVIJIT, Sirikarn, THOMPSON, Erica J, CHOWDHURY, Shaestagir, SAHA, Biswadeep
Format: Patent
Sprache:eng
Schlagworte:
ALLOYS
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FERROUS OR NON-FERROUS ALLOYS
METALLURGY
SEMICONDUCTOR DEVICES
TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:An integrated circuit structure comprises a dielectric layer on a substrate. An open structure is in the dielectric layer, and a void-free metal-alloy interconnect is formed in the open structure, wherein the void-free metal-alloy interconnect comprise a metal-alloy comprising a combination of two or more metallic elements excluding any mixing effects of a seed layer or liner deposited in the open structure prior to a metal fill material, and excluding effects of any doping material on the metal fill material.