METHODS OF FORMING METAL ON INHOMOGENEOUS SURFACES AND STRUCTURES INCORPORATING METAL ON INHOMOGENEOUS SURFACES

The disclosed technology relates to integrate circuits, including memory devices. A method of forming an integrated circuit comprises providing a surface comprising a first region and a second region, wherein the first region is formed of a different material than the second region. The method addit...

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Bibliographische Detailangaben
Hauptverfasser: Hu, Yongjun J, Chan, Tsz Wah, Lengade, Swapnil
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The disclosed technology relates to integrate circuits, including memory devices. A method of forming an integrated circuit comprises providing a surface comprising a first region and a second region, wherein the first region is formed of a different material than the second region. The method additionally comprises forming a seeding material in contact with and across the first and second regions. The method further comprises forming a metal comprising tungsten on the seeding material.