INTEGRATED CIRCUIT DEVICES INCLUDING FIN SHAPES

INTEGRATED CIRCUIT DEVICES INCLUDING FIN SHAPES

Integrated circuit devices are provided. An integrated circuit device includes a substrate having first and second fin-shaped Field Effect Transistor (FinFET) bodies protruding from the substrate. The first and second FinFET bodies have different respective first and second shapes in a first region...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Chung, Jae-yup
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Integrated circuit devices are provided. An integrated circuit device includes a substrate having first and second fin-shaped Field Effect Transistor (FinFET) bodies protruding from the substrate. The first and second FinFET bodies have different respective first and second shapes in a first region and a second region, respectively, of the integrated circuit device.