VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

A variable resistance memory device includes a first conductive line disposed on a substrate, a second conductive line disposed on the first conductive line and intersecting the first conductive line, and a memory cell disposed between the first conductive line and the second conductive line. The me...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: OH, GYUHWAN, SEONG, DONGJUN, JEONG, HYUNGJONG, PARK, YONGJIN, PARK, JUNHWAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A variable resistance memory device includes a first conductive line disposed on a substrate, a second conductive line disposed on the first conductive line and intersecting the first conductive line, and a memory cell disposed between the first conductive line and the second conductive line. The memory cell includes a variable resistance pattern, and a heater electrode disposed on the variable resistance pattern. The heater electrode includes a through-hole penetrating the heater electrode. The through-hole exposes one surface of the variable resistance pattern.