SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device includes: a substrate including a first and a second regions; first wiring layers disposed in a first direction; a second wiring layer; a third wiring layer closer to the substrate than the first and the second wiring layers; a semiconductor film that penetrates the first and the second wiring layers, and is connected to the third wiring layer; and a gate insulating film disposed between the semiconductor film and the first wiring layers. The first wiring layers include first conductive films opposed to the semiconductor film in the first region, and first films in the second region. The second wiring layer includes a second conductive film opposed to the semiconductor film in the first region, and a second film in the second region. The second film is different from the first films.