FOAM IN ION IMPLANTATION SYSTEM

FOAM IN ION IMPLANTATION SYSTEM

Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Pixley, James Alan, Stacy, Thomas, Stone, Lyudmila, Layne, Philip, Hermanson, Eric D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.