METHODS FOR SELECTIVE DEPOSITION USING MOLYBDENUM HEXACARBONYL

METHODS FOR SELECTIVE DEPOSITION USING MOLYBDENUM HEXACARBONYL

Methods for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface are provided including contacting the substrate and metal surface with molybdenum hexacarbonyl to selectively deposit a molybdenum layer atop the metal surface of the substrate, wherein the di...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEI, Wei, ANTHIS, Jeffrey
Format: Patent
Sprache:eng
Schlagworte:
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:Methods for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface are provided including contacting the substrate and metal surface with molybdenum hexacarbonyl to selectively deposit a molybdenum layer atop the metal surface of the substrate, wherein the dielectric layer inhibits deposition of the molybdenum layer atop the dielectric surface. In embodiments, contacting the substrate and metal surface with molybdenum hexacarbonyl is performed at a low temperature such as below 150 degrees Celsius or about 105 to about 125 degrees Celsius.