DAMASCENE-BASED APPROACHES FOR FABRICATING A PEDESTAL FOR A MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE AND THE RESULTING STRUCTURES

DAMASCENE-BASED APPROACHES FOR FABRICATING A PEDESTAL FOR A MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE AND THE RESULTING STRUCTURES

Damascene-based approaches for fabricating a pedestal for a magnetic tunnel junction (MTJ) device, and the resulting structures, are described. In an example, a magnetic tunnel junction (MTJ) device includes a metal line disposed in a dielectric layer disposed above a substrate, the metal line reces...

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Bibliographische Detailangaben
Hauptverfasser: CLARKE, James S, INDUKURI, Tejaswi K, SURI, Satyarth, TURKOT, JR., Robert B
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Zusammenfassung:Damascene-based approaches for fabricating a pedestal for a magnetic tunnel junction (MTJ) device, and the resulting structures, are described. In an example, a magnetic tunnel junction (MTJ) device includes a metal line disposed in a dielectric layer disposed above a substrate, the metal line recessed below an uppermost surface of the dielectric layer. The MTJ device also includes a conductive pedestal disposed on the metal line and laterally adjacent to the dielectric layer. The MTJ device also includes a magnetic tunnel junction (MTJ) stack disposed on the conductive pedestal.