ULTRA HIGH VOLTAGE SEMICONDUCTOR DEVICE WITH ELECTROSTATIC DISCHARGE CAPABILITIES

ULTRA HIGH VOLTAGE SEMICONDUCTOR DEVICE WITH ELECTROSTATIC DISCHARGE CAPABILITIES

The method comprises forming a drain region in the first layer. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular por...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHEN, Chih-Heng, WANG, Shen-Ping, CHU, Po-Tao, YANG, Tsai-Feng, YANG, Chun-Yi, HUANG, Kun-Ming
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The method comprises forming a drain region in the first layer. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The method also comprises forming a source region free from contact with and surrounding the drain region in the first layer.