SEMICONDUCTOR DEVICE
A semiconductor device includes a gate insulating film on a semiconductor substrate, and a gate electrode on the gate insulating film. The gate electrode includes a first layer containing polycrystalline silicon, a second layer between the first layer and the gate insulating film and containing poly...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A semiconductor device includes a gate insulating film on a semiconductor substrate, and a gate electrode on the gate insulating film. The gate electrode includes a first layer containing polycrystalline silicon, a second layer between the first layer and the gate insulating film and containing polycrystalline silicon and carbon, a third layer on an upper surface of the first layer and containing polycrystalline silicon and carbon, a fourth layer on a first side surface of the first layer and containing polycrystalline silicon and carbon, and a fifth layer on a second side surface of the first layer and containing polycrystalline silicon and carbon. |
|---|