VARIABLE RESISTANCE MEMORY DEVICE

A variable resistance memory device may include a first conductive line, a plurality of stacked structures, and a mold pattern. The first conductive line may be formed on a substrate. The plurality of stacked structures may be formed on the first conductive line, and each of the plurality of stacked...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Seong, Dong-Jun, Paik, Jun-Hwan, Park, Yong-Jin, Oh, Gyu-Hwan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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