VARIABLE RESISTANCE MEMORY DEVICE

VARIABLE RESISTANCE MEMORY DEVICE

A variable resistance memory device may include a first conductive line, a plurality of stacked structures, and a mold pattern. The first conductive line may be formed on a substrate. The plurality of stacked structures may be formed on the first conductive line, and each of the plurality of stacked...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Seong, Dong-Jun, Paik, Jun-Hwan, Park, Yong-Jin, Oh, Gyu-Hwan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A variable resistance memory device may include a first conductive line, a plurality of stacked structures, and a mold pattern. The first conductive line may be formed on a substrate. The plurality of stacked structures may be formed on the first conductive line, and each of the plurality of stacked structures includes a lower electrode, a variable resistance pattern, and a middle electrode stacked on one another. The mold pattern may be formed on the first conductive line to fill a space between the plurality of stacked structures. An upper portion of the mold pattern may include a surface treated layer and a lower portion of the mold pattern may include a non-surface treated layer.