SEMICONDUCTOR MEMORY DEVICE

According to one embodiment, a semiconductor memory device includes a stacked body in which a plurality of insulating layers and a plurality of conductive layers are alternately stacked above a substrate, a pillar that penetrates the stacked body while extending in a stacking direction of the stacke...

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Hauptverfasser:	FUJISHIMA, Tatsuya, SHISHIDO, Masayuki, KAGI, Yui, KIDO, Nozomi, KAJINO, Tomonori, KUGE, Nobuhito, MATSUSHITA, Daisuke
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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creator	FUJISHIMA, Tatsuya SHISHIDO, Masayuki KAGI, Yui KIDO, Nozomi KAJINO, Tomonori KUGE, Nobuhito MATSUSHITA, Daisuke
description	According to one embodiment, a semiconductor memory device includes a stacked body in which a plurality of insulating layers and a plurality of conductive layers are alternately stacked above a substrate, a pillar that penetrates the stacked body while extending in a stacking direction of the stacked body, and a semiconductor layer, a first insulating layer, a charge accumulation layer, and a second insulating layer, which are stacked on a side surface of the pillar in order from the pillar, wherein the semiconductor layer has an average grain size that is larger on a side nearer to the pillar and is smaller on a side nearer to the first insulating layer.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
title	SEMICONDUCTOR MEMORY DEVICE
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