SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

According to one embodiment, a semiconductor memory device includes a stacked body in which a plurality of insulating layers and a plurality of conductive layers are alternately stacked above a substrate, a pillar that penetrates the stacked body while extending in a stacking direction of the stacke...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FUJISHIMA, Tatsuya, SHISHIDO, Masayuki, KAGI, Yui, KIDO, Nozomi, KAJINO, Tomonori, KUGE, Nobuhito, MATSUSHITA, Daisuke
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:According to one embodiment, a semiconductor memory device includes a stacked body in which a plurality of insulating layers and a plurality of conductive layers are alternately stacked above a substrate, a pillar that penetrates the stacked body while extending in a stacking direction of the stacked body, and a semiconductor layer, a first insulating layer, a charge accumulation layer, and a second insulating layer, which are stacked on a side surface of the pillar in order from the pillar, wherein the semiconductor layer has an average grain size that is larger on a side nearer to the pillar and is smaller on a side nearer to the first insulating layer.