INTERCONNECTS FORMED BY A METAL DISPLACEMENT REACTION

INTERCONNECTS FORMED BY A METAL DISPLACEMENT REACTION

Structures for interconnects and methods of forming interconnects. An interconnect opening in a dielectric layer includes a first portion and a second portion arranged over the first portion. A first conductor layer composed of a first metal is arranged inside the first portion of the interconnect o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ryan, Errol Todd, LiCausi, Nicholas V, Lin, Sean Xuan, Witt, Christian, Raymond, Mark V
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Structures for interconnects and methods of forming interconnects. An interconnect opening in a dielectric layer includes a first portion and a second portion arranged over the first portion. A first conductor layer composed of a first metal is arranged inside the first portion of the interconnect opening. A second conductor layer composed of a second metal is arranged inside the second portion of the interconnect opening. The first metal is ruthenium.