GAS ETCHING DEVICE

A gas etching device includes an upper cover having a first gas exhausting channel that surrounds a first accommodation space. A lower cover has a second accommodation space where a wafer is located. The lower cover can connect with the upper cover. A gas jetting element is arranged in the first accommodation space to communicate with the upper cover. The gas jetting element receives etching gas from outside the upper cover and jets the etching gas in the first accommodation space and the second accommodation space to react with the wafer. The reacted etching gas is exhausted through the first gas exhausting channel. The first gas entering channel continues receives high-pressure gas from outside the upper cover and transmits the high-pressure gas to the second gas entering channel, so as to avoid leaking the etching gas.