DEVICES WITH SLOTTED ACTIVE REGIONS

The present disclosure relates to semiconductor structures and, more particularly, to devices with slotted active regions and methods of manufacture. The method includes: forming a mandrel on top of a diffusion region comprising a diffusion material; forming a first material over the mandrel and the...

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Bibliographische Detailangaben
Hauptverfasser: LEI, Lixia, SUN, Kai, NAYYAR, Neha, PRABHU, Manjunatha G, PRITCHARD, David C, MITTAL, Anurag, YANG, Heng, REN, Hongru, KLUTH, George J
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present disclosure relates to semiconductor structures and, more particularly, to devices with slotted active regions and methods of manufacture. The method includes: forming a mandrel on top of a diffusion region comprising a diffusion material; forming a first material over the mandrel and the diffusion region; removing the mandrel to form multiple spacers each having a thickness; depositing a second material over the spacers and the diffusion material; and forming slots in the diffusion region by removing a portion of the second material over the diffusion region and the underlying diffusion material.