Film-Forming Method and Film-Forming Apparatus

A film-forming method for forming a metal nitride film on a substrate includes: forming the metal nitride film on the substrate by repeating a cycle a predetermined number of times, the cycle including: a first process of supplying a metal-containing gas into a process container configured to accommodate the substrate therein; a second process of supplying a purge gas into the process container; a third process of supplying a nitrogen-containing gas into the process container; and a fourth process of supplying the purge gas into the process container, wherein the fourth process includes: a first step of supplying a first purge gas having a first flow rate equal to or larger than a flow rate of the metal-containing gas of the first process; and a second step of supplying the first purge gas having a second flow rate smaller than the first flow rate.