CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION

The present invention relates to a chemical mechanical polishing slurry composition, and more specifically, to a chemical mechanical polishing slurry composition that can polish an insulating film such as a silicon nitride film or a metal film such as tungsten alone or simultaneously, and particular...

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Bibliographische Detailangaben
Hauptverfasser:	Jin, Sunghoon, Park, Chang Yong, Park, Hyejung, Park, Min-Sung, Kim, Jaehyun, Lee, Mingun, Lee, Goo-Hwa, Park, Jongdai
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	The present invention relates to a chemical mechanical polishing slurry composition, and more specifically, to a chemical mechanical polishing slurry composition that can polish an insulating film such as a silicon nitride film or a metal film such as tungsten alone or simultaneously, and particularly, can easily control the polishing speed, and thus minimize an interlayer step difference of a semiconductor device by using a compound having a phosphate group as an agent for controlling polishing selectivity, and selectively using a tertiary amine compound together with the agent for controlling polishing selectivity, and a method for polishing a semiconductor substrate using the same.