PART FOR MANUFACTURING SEMICONDUCTOR, PART FOR MANUFACTURING SEMICONDUCTOR CONTAINING COMPOSITE COATING LAYER, AND METHOD FOR MANUFACTURING SAME

An embodiment of the present invention provides a part for manufacturing a semiconductor, the part comprising a composite containing SiC and C, wherein an atomic ratio of Si:C in the composite is 1:1.1 to 1:2.8.

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Bibliographische Detailangaben
1. Verfasser: Kim, Joung Il
Format: Patent
Sprache:eng
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