PART FOR MANUFACTURING SEMICONDUCTOR, PART FOR MANUFACTURING SEMICONDUCTOR CONTAINING COMPOSITE COATING LAYER, AND METHOD FOR MANUFACTURING SAME

An embodiment of the present invention provides a part for manufacturing a semiconductor, the part comprising a composite containing SiC and C, wherein an atomic ratio of Si:C in the composite is 1:1.1 to 1:2.8.

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Bibliographische Detailangaben
1. Verfasser:	Kim, Joung Il
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An embodiment of the present invention provides a part for manufacturing a semiconductor, the part comprising a composite containing SiC and C, wherein an atomic ratio of Si:C in the composite is 1:1.1 to 1:2.8.