PART FOR MANUFACTURING SEMICONDUCTOR, PART FOR MANUFACTURING SEMICONDUCTOR CONTAINING COMPOSITE COATING LAYER, AND METHOD FOR MANUFACTURING SAME

An embodiment of the present invention provides a part for manufacturing a semiconductor, the part comprising a composite containing SiC and C, wherein an atomic ratio of Si:C in the composite is 1:1.1 to 1:2.8.

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Kim, Joung Il
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Kim, Joung Il
description An embodiment of the present invention provides a part for manufacturing a semiconductor, the part comprising a composite containing SiC and C, wherein an atomic ratio of Si:C in the composite is 1:1.1 to 1:2.8.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020043757A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020043757A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020043757A13</originalsourceid><addsrcrecordid>eNrjZJgQ4BgUouDmH6Tg6-gX6uboHBIa5OnnrhDs6uvp7O_nEuoc4h-ko0CMKgUgK8TR0w8k4ezvG-Af7BniCmQ5hoBEfBwjXYEGOfq5KPi6hnj4u2AzztHXlYeBNS0xpziVF0pzMyi7uYY4e-imFuTHpxYXJCan5qWWxIcGGxkYGRiYGJubmjsaGhOnCgCzbEH1</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PART FOR MANUFACTURING SEMICONDUCTOR, PART FOR MANUFACTURING SEMICONDUCTOR CONTAINING COMPOSITE COATING LAYER, AND METHOD FOR MANUFACTURING SAME</title><source>esp@cenet</source><creator>Kim, Joung Il</creator><creatorcontrib>Kim, Joung Il</creatorcontrib><description>An embodiment of the present invention provides a part for manufacturing a semiconductor, the part comprising a composite containing SiC and C, wherein an atomic ratio of Si:C in the composite is 1:1.1 to 1:2.8.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200206&amp;DB=EPODOC&amp;CC=US&amp;NR=2020043757A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25571,76555</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200206&amp;DB=EPODOC&amp;CC=US&amp;NR=2020043757A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim, Joung Il</creatorcontrib><title>PART FOR MANUFACTURING SEMICONDUCTOR, PART FOR MANUFACTURING SEMICONDUCTOR CONTAINING COMPOSITE COATING LAYER, AND METHOD FOR MANUFACTURING SAME</title><description>An embodiment of the present invention provides a part for manufacturing a semiconductor, the part comprising a composite containing SiC and C, wherein an atomic ratio of Si:C in the composite is 1:1.1 to 1:2.8.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJgQ4BgUouDmH6Tg6-gX6uboHBIa5OnnrhDs6uvp7O_nEuoc4h-ko0CMKgUgK8TR0w8k4ezvG-Af7BniCmQ5hoBEfBwjXYEGOfq5KPi6hnj4u2AzztHXlYeBNS0xpziVF0pzMyi7uYY4e-imFuTHpxYXJCan5qWWxIcGGxkYGRiYGJubmjsaGhOnCgCzbEH1</recordid><startdate>20200206</startdate><enddate>20200206</enddate><creator>Kim, Joung Il</creator><scope>EVB</scope></search><sort><creationdate>20200206</creationdate><title>PART FOR MANUFACTURING SEMICONDUCTOR, PART FOR MANUFACTURING SEMICONDUCTOR CONTAINING COMPOSITE COATING LAYER, AND METHOD FOR MANUFACTURING SAME</title><author>Kim, Joung Il</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020043757A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim, Joung Il</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Joung Il</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PART FOR MANUFACTURING SEMICONDUCTOR, PART FOR MANUFACTURING SEMICONDUCTOR CONTAINING COMPOSITE COATING LAYER, AND METHOD FOR MANUFACTURING SAME</title><date>2020-02-06</date><risdate>2020</risdate><abstract>An embodiment of the present invention provides a part for manufacturing a semiconductor, the part comprising a composite containing SiC and C, wherein an atomic ratio of Si:C in the composite is 1:1.1 to 1:2.8.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2020043757A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PART FOR MANUFACTURING SEMICONDUCTOR, PART FOR MANUFACTURING SEMICONDUCTOR CONTAINING COMPOSITE COATING LAYER, AND METHOD FOR MANUFACTURING SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-05T19%3A20%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kim,%20Joung%20Il&rft.date=2020-02-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2020043757A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true