LASER ANNEALING METHOD

LASER ANNEALING METHOD

A laser annealing method includes: step A of providing a substrate having an amorphous semiconductor film formed on a surface thereof; and step BF of selectively irradiating a portion of the amorphous semiconductor film with laser light. Step B includes a step of simultaneously forming, in said port...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Koiwa, Shinji, Nodera, Nobutake, Tanaka, Masakazu, Matsumoto, Takao, Karatani, Kouichi, Shinozuka, Akihiro
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A laser annealing method includes: step A of providing a substrate having an amorphous semiconductor film formed on a surface thereof; and step BF of selectively irradiating a portion of the amorphous semiconductor film with laser light. Step B includes a step of simultaneously forming, in said portion, a first melted region that is elongated in a first direction and a second direction that is elongated in a second melted region different from the first direction.