OXIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE

OXIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE

Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Ikeda, Shintarou, Kikuchi, Naoto, Aiura, Yoshihiro, Samizo, Akane
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a foordite structure and contains Nb and Sn elements, and its holes become charge carriers by the condition that Sn4+/(Sn2++Sn4+) which is a ratio of Sn4+ to a total amount of Sn in the composite oxide is 0.006≤Sn4+/(Sn2++Sn4+)≤0.013.