OXIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE

Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal...

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Bibliographische Detailangaben
Hauptverfasser:	Ikeda, Shintarou, Kikuchi, Naoto, Aiura, Yoshihiro, Samizo, Akane
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SEMICONDUCTOR DEVICES THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn4+/(Sn2++Sn4+) which is a ratio of Sn4+ to a total amount of Sn in the composite oxide is 0.124≤Sn4+/(Sn2++Sn4+)≤0.148.