MOLYBDENUM CONTAINING TARGETS

The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a pha...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Rozak, Gary Alan, Hogan, Patrick Alan, Gaydos, Mark E, Sun, Shuwei
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.