PROCESS FOR GROWING NANOWIRES OR NANOPYRAMIDS ON GRAPHITIC SUBSTRATES

PROCESS FOR GROWING NANOWIRES OR NANOPYRAMIDS ON GRAPHITIC SUBSTRATES

A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of s...

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Bibliographische Detailangaben
Hauptverfasser: HØIAAS, Ida Marie, DHEERAJ, Dasa, KIM, Dong-Chul, MUNSHI, Mazid, WEMAN, Helge, FIMLAND, Bjørn Ove, REN, Dingding
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.