STRESSED DECOUPLED MICRO-ELECTRO-MECHANICAL SYSTEM SENSOR

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main sur...

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Bibliographische Detailangaben
Hauptverfasser: Knott, Bernhard, Stegemann, Maik, THEUSS, Horst, Kautzsch, Thoralf, Froehlich, Heiko, Langheinrich, Wolfram, Vogt, Mirko, Bieselt, Steffen, Haubold, Marco, Roeth, Andre
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.