TRENCH SEMICONDUCTOR DEVICE HAVING MULTIPLE ACTIVE TRENCH DEPTHS AND METHOD

A method of forming a semiconductor device includes providing a region of semiconductor material comprising a major surface. A termination trench is provided extending from a first portion of the major surface into the region of semiconductor material to a first depth and has a first width. A first active trench is provided extending from a second portion of the major surface into the region of semiconductor material to a second depth and has a second width less than the first width. A second active trench is provided extending from a third portion of the major surface into the region of semiconductor material to a third depth and has a third width less than the first width. A first conductive material is provided adjoining a fourth portion of the major surface, which is configured as a Schottky barrier. The selected trench depth difference alone or in combination with other features provides a semiconductor device having improved performance characteristics.