METHOD OF ETCHING AT LOW TEMPERATURE AND PLASMA ETCHING APPARATUS

METHOD OF ETCHING AT LOW TEMPERATURE AND PLASMA ETCHING APPARATUS

A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.

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Hauptverfasser: LEE, CHEONKYU, Jeong, Seongha, Kim, Moonseok, Byun, Iksu, Han, Dongseok, Song, Changwoo
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LEE, CHEONKYU
Jeong, Seongha
Kim, Moonseok
Byun, Iksu
Han, Dongseok
Song, Changwoo
description A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF ETCHING AT LOW TEMPERATURE AND PLASMA ETCHING APPARATUS
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