METHOD OF ETCHING AT LOW TEMPERATURE AND PLASMA ETCHING APPARATUS

METHOD OF ETCHING AT LOW TEMPERATURE AND PLASMA ETCHING APPARATUS

A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.

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Bibliographische Detailangaben
Hauptverfasser: LEE, CHEONKYU, Jeong, Seongha, Kim, Moonseok, Byun, Iksu, Han, Dongseok, Song, Changwoo
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.