MULTIPLE NANOSECOND LASER PULSE ANNEAL PROCESSES AND RESULTANT SEMICONDUCTOR STRUCTURE

MULTIPLE NANOSECOND LASER PULSE ANNEAL PROCESSES AND RESULTANT SEMICONDUCTOR STRUCTURE

Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconductin...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: DASGUPTA, Aritra, GLUSCHENKOV, Oleg
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.