APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

An apparatus for processing a substrate includes a process chamber, a support unit that supports the substrate in the process chamber, a gas supply unit that supplies a process gas, and a plasma source that generates plasma from the process gas. The support unit includes an electrostatic chuck, and the apparatus further includes a power supply that supplies a chucking voltage to the electrostatic chuck and a management unit that feedback controls a voltage applied to the power supply for each process and controls a heat transfer gas flow supplied between the substrate and the electrostatic chuck. The management unit includes a first monitoring unit that monitors a physical property change of the substrate. The management unit includes a first controller that performs control to compensate for the chucking voltage by feeding back a chucking force value corresponding to a preset reference value based on the monitored property changes.