Method for Producing a Semiconductor Device

The disclosure relates to a method for producing a semiconductor device. The method includes providing a semiconductor body having first dopants of a first conductivity type and second dopants of a second conductivity type. The method also includes forming a first trench in the semiconductor body via a first mask, and filling the first trench with a semiconductor filling material. The method further includes forming a superjunction structure by introducing a portion of the first dopants from a region of the semiconductor body into the semiconductor filling material, forming a second trench in the semiconductor body via a second mask, which is formed in a manner self-aligned with respect to the first mask, and forming a trench structure in the second trench.