Methods for Processing a Wide Band Gap Semiconductor Wafer, Methods for Forming a Plurality of Thin Wide Band Gap Semiconductor Wafers, and Wide Band Gap Semiconductor Wafers

Methods for Processing a Wide Band Gap Semiconductor Wafer, Methods for Forming a Plurality of Thin Wide Band Gap Semiconductor Wafers, and Wide Band Gap Semiconductor Wafers

A method for processing a wide band gap semiconductor wafer is proposed. The method includes depositing a non-monocrystalline support layer at a back side of a wide band gap semiconductor wafer, depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer, and splitting the...

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Bibliographische Detailangaben
Hauptverfasser: Santos Rodriguez, Francisco Javier, Denifl, Guenter, Lehnert, Wolfgang, Rupp, Roland, Hoechbauer, Tobias Franz Wolfgang, Schulze, Hans-Joachim, Huber, Martin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method for processing a wide band gap semiconductor wafer is proposed. The method includes depositing a non-monocrystalline support layer at a back side of a wide band gap semiconductor wafer, depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer, and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer including at least a part of the epitaxial layer, and a remaining wafer including the non-monocrystalline support layer.