METHOD FOR FORMING A CAVITY AND A COMPONENT HAVING A CAVITY

A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substra...

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Bibliographische Detailangaben
Hauptverfasser:	Tomaschko, Jochen, Steuer, Benjamin, Haberer, Dietmar, Armbruster, Simon, Pinter, Stefan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.