METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS

A semiconductor device, comprising a first field effect transistor (FET) connected in series to a second FET, and a third FET connected in series to the first FET and the second FET. The semiconductor device further includes bias circuitry coupled to the first FET and the second FET, and an output c...

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1. Verfasser: FIFE, Keith
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device, comprising a first field effect transistor (FET) connected in series to a second FET, and a third FET connected in series to the first FET and the second FET. The semiconductor device further includes bias circuitry coupled to the first FET and the second FET, and an output conductor coupled to a terminal of the second FET, wherein the output conductor obtains an output signal from the second FET that is independent of the first FET.