FLUORESCENT LIGHT SOURCE DEVICE AND PRODUCTION PROCESS OF SAME

The fluorescent light source device of the present invention includes a fluorescent plate which has a fluorescent light-emitting layer formed of a polycrystalline material and in which a periodic structure body is formed on an excitation light incident side of the fluorescent light-emitting layer. T...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KABUKI, Kiyoyuki, INOUE, Masaki
Format:	Patent
Sprache:	eng
Schlagworte:	BLASTING CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF HEATING LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM LIGHTING MACHINE TOOLS MECHANICAL ENGINEERING METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SOLDERING OR UNSOLDERING STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR TRANSPORTING WEAPONS WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	The fluorescent light source device of the present invention includes a fluorescent plate which has a fluorescent light-emitting layer formed of a polycrystalline material and in which a periodic structure body is formed on an excitation light incident side of the fluorescent light-emitting layer. The fluorescent plate has a thermal diffusion layer which is directly bonded to a front surface of the fluorescent light-emitting layer on the excitation light incident side and has a thermal conductivity larger than that of the fluorescent light-emitting layer, and a high thermal conductive layer provided on a back surface of the fluorescent light-emitting layer opposite to the excitation light incident side. The high thermal conductive layer is formed of a light reflection layer and a bonding layer made of a metal, and the fluorescent plate is provided so as to cover a part of a surface of a heat dissipation substrate disposed on a side of the high thermal conductive layer side.