SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A thin film resistor includes a high-resistance region and low-resistance regions which are formed at both ends of the high-resistance region. The high-resistance region includes first high-resistance regions and a second high-resistance region, and the first high-resistance regions are formed to be...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A thin film resistor includes a high-resistance region and low-resistance regions which are formed at both ends of the high-resistance region. The high-resistance region includes first high-resistance regions and a second high-resistance region, and the first high-resistance regions are formed to be in contact with both ends of the second high-resistance region formed in a rectangular shape in a transverse direction (first direction) of the second high-resistance region. In a longitudinal direction (second direction) orthogonal to the transverse direction, the first high-resistance regions have the same length as that of the second high-resistance region, and both end surfaces of the first high-resistance regions in the longitudinal direction are flush with both end surfaces of the second high-resistance region in the longitudinal direction to form flat planes. |
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