MULTI VOLTAGE THRESHOLD TRANSISTORS THROUGH PROCESS AND DESIGN-INDUCED MULTIPLE WORK FUNCTIONS

MULTI VOLTAGE THRESHOLD TRANSISTORS THROUGH PROCESS AND DESIGN-INDUCED MULTIPLE WORK FUNCTIONS

An apparatus comprising at least one transistor in a first area of a substrate and at least one transistor in a second area, a work function material on a channel region of each of the at least one transistor, wherein an amount of work function material in the first area is different than an amount...

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Bibliographische Detailangaben
Hauptverfasser: LEE, Chen-Guan, JAN, Chia-Hong, HAFEZ, Walid M, CHANG, Hsu-Yu, CASSIDY-COMFORT, Everett S, RAMASWAMY, Rahul, DIAS, Neville L, PARK, Joodong
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An apparatus comprising at least one transistor in a first area of a substrate and at least one transistor in a second area, a work function material on a channel region of each of the at least one transistor, wherein an amount of work function material in the first area is different than an amount of work function material in the second area. A method comprising depositing a work function material and a masking material on at least one transistor body in a first area and at least one in a second area; removing less than an entire portion of the masking material so that the portion of the work function material that is exposed in the first area is different than that exposed in the second area; removing the exposed work function material; and forming a gate electrode on each of the at least one transistor bodies.