MASK MATERIAL FOR PLASMA DICING, MASK-INTEGRATED SURFACE PROTECTIVE TAPE AND METHOD OF PRODUCING SEMICONDUCTOR CHIP

A mask material for plasma dicing, which is used in a plasma step, whose surface roughness Rz at the surface side that does not touch with an adherend is from 0.1 μm to 1.5 μm;a mask-integrated surface protective tape; anda method of producing a semiconductor chip.

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Bibliographische Detailangaben
Hauptverfasser:	Nishikawa, Takuya, Akutsu, Akira
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A mask material for plasma dicing, which is used in a plasma step, whose surface roughness Rz at the surface side that does not touch with an adherend is from 0.1 μm to 1.5 μm;a mask-integrated surface protective tape; anda method of producing a semiconductor chip.