Cu-Ga SPUTTERING TARGET AND METHOD OF MANUFACTURING Cu-Ga SPUTTERING TARGET

A Cu-Ga sputtering target of the present invention includes, as a composition of metal components, Ga in a range of 5 at % to 60 at %, at least one additive element selected from the group consisting of K, Rb, and Cs in a range of 0.01 at % to 5 at %, and a balance including Cu and inevitable impuri...

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Bibliographische Detailangaben
Hauptverfasser:	UMEMOTO, Keita, SHIONO, Ichiro, IO, Kensuke, ZHANG, Shoubin
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS CASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METALLURGY PERFORMING OPERATIONS POWDER METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WORKING METALLIC POWDER
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Beschreibung
Zusammenfassung:	A Cu-Ga sputtering target of the present invention includes, as a composition of metal components, Ga in a range of 5 at % to 60 at %, at least one additive element selected from the group consisting of K, Rb, and Cs in a range of 0.01 at % to 5 at %, and a balance including Cu and inevitable impurities, in which all or a part of the additive element is present in a state of halide particles including at least one halogen selected from the group consisting of F, Cl, Br, and I, a maximum particle size of the halide particles is 15 μm or less, and an oxygen concentration is 1000 mass ppm or less.