POLAR FLUID GATED FIELD EFFECT DEVICES

Disclosed herein are nanoscale field effect transistors (NFETs), e.g., graphene based field effect transistors (GFETs), that do not have physical gates. Instead, they are gated by polar fluids. Systems and methods using such transistors are also disclosed.

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Bibliographische Detailangaben
Hauptverfasser:	GUDIBANDE, Rajatesh Ravindra, GALANO, Antoine, RADHAKRISHNAN, Saurabh, Vora, Meet
Format:	Patent
Sprache:	eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Disclosed herein are nanoscale field effect transistors (NFETs), e.g., graphene based field effect transistors (GFETs), that do not have physical gates. Instead, they are gated by polar fluids. Systems and methods using such transistors are also disclosed.