POWER MOSFETS AND METHODS FOR MANUFACTURING THE SAME

A semiconductor device and the method of manufacturing the same are provided. The semiconductor device comprises a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN, CHIIH, YAO, CHIH-WEN, YADAV, YOGENDRA, LIU, RUEY-HSIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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