POWER MOSFETS AND METHODS FOR MANUFACTURING THE SAME

POWER MOSFETS AND METHODS FOR MANUFACTURING THE SAME

A semiconductor device and the method of manufacturing the same are provided. The semiconductor device comprises a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHEN, CHIIH, YAO, CHIH-WEN, YADAV, YOGENDRA, LIU, RUEY-HSIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device and the method of manufacturing the same are provided. The semiconductor device comprises a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.