THERMAL MODEL BASED HEALTH ASSESSMENT OF IGBT

An apparatus and method for determining occurrence of a fault at an insulated-gate bipolar transistor (IGBT) module is disclosed. The IGBT module and apparatus can be part of an electric vehicle. A sensor obtains a measurement of a thermal parameter of the IGBT module. A processor receives the measu...

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Bibliographische Detailangaben
Hauptverfasser:	Sarwar, Azeem, Zholbaryssov, Madi, Son, Yo Chan, Zanardelli, Wesley G
Format:	Patent
Sprache:	eng
Schlagworte:	ALARM SYSTEMS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES ORDER TELEGRAPHS PHYSICS SIGNALLING SIGNALLING OR CALLING SYSTEMS TESTING
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Beschreibung
Zusammenfassung:	An apparatus and method for determining occurrence of a fault at an insulated-gate bipolar transistor (IGBT) module is disclosed. The IGBT module and apparatus can be part of an electric vehicle. A sensor obtains a measurement of a thermal parameter of the IGBT module. A processor receives the measured thermal parameter from the sensor, and runs a model of the IGBT module to determine a thermal parameter of the IGBT module under normal operation conditions. The processor provides an alert signal to indicate the occurrence of the fault when a difference between the estimated thermal parameter and the measured thermal parameter is greater than or equal to a selected threshold.