SEMICONDUCTOR DEVICES HAVING SOURCE/DRAIN REGIONS

SEMICONDUCTOR DEVICES HAVING SOURCE/DRAIN REGIONS

A semiconductor device includes a substrate having a fin active region pattern having a protruding shape, a device isolation layer pattern covering a side surface of a lower portion of the fin active region pattern, a spacer pattern covering a side surface of a portion of the fin active region patte...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SEONG, Geum-jung, LIM, Bo-ra, LEE, Jeong-yun, JI, Ah-reum
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a substrate having a fin active region pattern having a protruding shape, a device isolation layer pattern covering a side surface of a lower portion of the fin active region pattern, a spacer pattern covering a side surface of a portion of the fin active region pattern that protrudes from a top surface of the device isolation layer pattern, and a source/drain region in contact with a top surface of the fin active region pattern and a top surface of the spacer pattern.