SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, AND APPARATUS USED IN FABRICATION THEREOF

A semiconductor device includes a substrate, upper impurity regions in upper portions of the substrate, metal electrodes electrically connected to the upper impurity regions, metal silicide layers between the metal electrodes and the upper impurity regions, and a lower impurity region in a lower por...

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1. Verfasser: CHO, Choong-rae
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device includes a substrate, upper impurity regions in upper portions of the substrate, metal electrodes electrically connected to the upper impurity regions, metal silicide layers between the metal electrodes and the upper impurity regions, and a lower impurity region in a lower portion of the substrate. A method of fabricating the semiconductor device and an apparatus used in fabricating the semiconductor device is also provided.