Magnetic Field Sensor Having Magnetoresistance Elements with Opposite Bias Directions

A magnetic field sensor can include a substrate, a first magnetoresistance element disposed over the substrate and including a first maximum response axis and a first bias layer structure configured to generate a first bias magnetic field with a first magnetic direction between ninety degrees and si...

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Bibliographische Detailangaben
Hauptverfasser: Lassalle-Balier, Rémy, Latham, Alexander, Campiglio, Paolo, Cadugan, Bryan, Belin, Noémie
Format: Patent
Sprache:eng
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Zusammenfassung:A magnetic field sensor can include a substrate, a first magnetoresistance element disposed over the substrate and including a first maximum response axis and a first bias layer structure configured to generate a first bias magnetic field with a first magnetic direction between ninety degrees and sixty degrees relative to the first maximum response axis. The magnetic field sensor can also include a second magnetoresistance element disposed over the substrate and including a second maximum response axis parallel to the first maximum response axis and a second bias layer structure configured to generate a second bias magnetic field with a second magnetic direction parallel to the first magnetic direction and opposed to the first magnetic direction. The first and second magnetoresistance elements can each have a pair of electrical contacts for coupling to circuits.